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原子层沉积系统 ALD

点击次数：151  发布时间：2020/12/21 10:48:05

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公司名称：上海非利加实业有限公司 型 号：ALD-02 生产地址：中国大陆 已获点击：151 简单介绍： ALD-02原子层沉积系统 ALD
产品介绍
The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-ba

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ALD-02原子层沉积系统 ALD
ALD-02原子层沉积系统 ALD

产品特点

产品参数

产品介绍

The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.

 

 

产品参数

Operation Vacuum: 1 Torr to UHV 

2 Heated Gas Lines (can be expanded to 12)

Gas injection mode: bubbler ａnd direct draw

Sample size: up to 4 in standard, optional 12in

Substrate heater: up to 500°C, optional higher temp

 

 

产品介绍

Applications

High k dielectrics

Nanocoatings

Surface modification layers

Device encapsulations

Photonic crystals

Optional add-on components

Remote plasma source

Ozone delivery system

Quartz crystal monitor

Quadruple mass spectrometer

Real-time temperature monitor

Ellipsometer

LoadLock
 ALD-02原子层沉积系统 ALD

产品特点

产品参数

产品介绍

The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.

 

 

产品参数

Operation Vacuum: 1 Torr to UHV 

2 Heated Gas Lines (can be expanded to 12)

Gas injection mode: bubbler ａnd direct draw

Sample size: up to 4 in standard, optional 12in

Substrate heater: up to 500°C, optional higher temp

 

 

产品介绍

Applications

High k dielectrics

Nanocoatings

Surface modification layers

Device encapsulations

Photonic crystals

Optional add-on components

Remote plasma source

Ozone delivery system

Quartz crystal monitor

Quadruple mass spectrometer

Real-time temperature monitor

Ellipsometer

LoadLock ALD-02原子层沉积系统 ALD

产品特点

产品参数

产品介绍

The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.

 

 

产品参数

Operation Vacuum: 1 Torr to UHV 

2 Heated Gas Lines (can be expanded to 12)

Gas injection mode: bubbler ａnd direct draw

Sample size: up to 4 in standard, optional 12in

Substrate heater: up to 500°C, optional higher temp

 

 

产品介绍

Applications

High k dielectrics

Nanocoatings

Surface modification layers

Device encapsulations

Photonic crystals

Optional add-on components

Remote plasma source

Ozone delivery system

Quartz crystal monitor

Quadruple mass spectrometer

Real-time temperature monitor

Ellipsometer

LoadLock ALD-02原子层沉积系统 ALD

产品特点

产品参数

产品介绍

The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.

 

 

产品参数

Operation Vacuum: 1 Torr to UHV 

2 Heated Gas Lines (can be expanded to 12)

Gas injection mode: bubbler ａnd direct draw

Sample size: up to 4 in standard, optional 12in

Substrate heater: up to 500°C, optional higher temp

 

 

产品介绍

Applications

High k dielectrics

Nanocoatings

Surface modification layers

Device encapsulations

Photonic crystals

Optional add-on components

Remote plasma source

Ozone delivery system

Quartz crystal monitor

Quadruple mass spectrometer

Real-time temperature monitor

Ellipsometer

LoadLock ALD-02原子层沉积系统 ALD

产品特点

产品参数

产品介绍

The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.

 

 

产品参数

Operation Vacuum: 1 Torr to UHV 

2 Heated Gas Lines (can be expanded to 12)

Gas injection mode: bubbler ａnd direct draw

Sample size: up to 4 in standard, optional 12in

Substrate heater: up to 500°C, optional higher temp

 

 

产品介绍

Applications

High k dielectrics

Nanocoatings

Surface modification layers

Device encapsulations

Photonic crystals

Optional add-on components

Remote plasma source

Ozone delivery system

Quartz crystal monitor

Quadruple mass spectrometer

Real-time temperature monitor

Ellipsometer

LoadLock ALD-02原子层沉积系统 ALD

产品特点

产品参数

产品介绍

The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.

 

 

产品参数

Operation Vacuum: 1 Torr to UHV 

2 Heated Gas Lines (can be expanded to 12)

Gas injection mode: bubbler ａnd direct draw

Sample size: up to 4 in standard, optional 12in

Substrate heater: up to 500°C, optional higher temp

 

 

产品介绍

Applications

High k dielectrics

Nanocoatings

Surface modification layers

Device encapsulations

Photonic crystals

Optional add-on components

Remote plasma source

Ozone delivery system

Quartz crystal monitor

Quadruple mass spectrometer

Real-time temperature monitor

Ellipsometer

LoadLockvvv ALD-02原子层沉积系统 ALD

产品特点

产品参数

产品介绍

The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.

 

 

产品参数

Operation Vacuum: 1 Torr to UHV 

2 Heated Gas Lines (can be expanded to 12)

Gas injection mode: bubbler ａnd direct draw

Sample size: up to 4 in standard, optional 12in

Substrate heater: up to 500°C, optional higher temp

 

 

产品介绍

Applications

High k dielectrics

Nanocoatings

Surface modification layers

Device encapsulations

Photonic crystals

Optional add-on components

Remote plasma source

Ozone delivery system

Quartz crystal monitor

Quadruple mass spectrometer

Real-time temperature monitor

Ellipsometer

LoadLockvvv ALD-02原子层沉积系统 ALD

产品特点

产品参数

产品介绍

The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.

 

 

产品参数

Operation Vacuum: 1 Torr to UHV 

2 Heated Gas Lines (can be expanded to 12)

Gas injection mode: bubbler ａnd direct draw

Sample size: up to 4 in standard, optional 12in

Substrate heater: up to 500°C, optional higher temp

 

 

产品介绍

Applications

High k dielectrics

Nanocoatings

Surface modification layers

Device encapsulations

Photonic crystals

Optional add-on components

Remote plasma source

Ozone delivery system

Quartz crystal monitor

Quadruple mass spectrometer

Real-time temperature monitor

Ellipsometer

LoadLockvvv ALD-02原子层沉积系统 ALD

产品特点

产品参数

产品介绍

The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.

 

 

产品参数

Operation Vacuum: 1 Torr to UHV 

2 Heated Gas Lines (can be expanded to 12)

Gas injection mode: bubbler ａnd direct draw

Sample size: up to 4 in standard, optional 12in

Substrate heater: up to 500°C, optional higher temp

 

 

产品介绍

Applications

High k dielectrics

Nanocoatings

Surface modification layers

Device encapsulations

Photonic crystals

Optional add-on components

Remote plasma source

Ozone delivery system

Quartz crystal monitor

Quadruple mass spectrometer

Real-time temperature monitor

Ellipsometer

LoadLock ALD-02原子层沉积系统 ALD

产品特点

产品参数

产品介绍

The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.

 

 

产品参数

Operation Vacuum: 1 Torr to UHV 

2 Heated Gas Lines (can be expanded to 12)

Gas injection mode: bubbler ａnd direct draw

Sample size: up to 4 in standard, optional 12in

Substrate heater: up to 500°C, optional higher temp

 

 

产品介绍

Applications

High k dielectrics

Nanocoatings

Surface modification layers

Device encapsulations

Photonic crystals

Optional add-on components

Remote plasma source

Ozone delivery system

Quartz crystal monitor

Quadruple mass spectrometer

Real-time temperature monitor

Ellipsometer

LoadLock
 ALD-02原子层沉积系统 ALD

产品特点

产品参数

产品介绍

The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.

 

 

产品参数

Operation Vacuum: 1 Torr to UHV 

2 Heated Gas Lines (can be expanded to 12)

Gas injection mode: bubbler ａnd direct draw

Sample size: up to 4 in standard, optional 12in

Substrate heater: up to 500°C, optional higher temp

 

 

产品介绍

Applications

High k dielectrics

Nanocoatings

Surface modification layers

Device encapsulations

Photonic crystals

Optional add-on components

Remote plasma source

Ozone delivery system

Quartz crystal monitor

Quadruple mass spectrometer

Real-time temperature monitor

Ellipsometer

LoadLock ALD-02原子层沉积系统 ALD

产品特点

产品参数

产品介绍

The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.

 

 

产品参数

Operation Vacuum: 1 Torr to UHV 

2 Heated Gas Lines (can be expanded to 12)

Gas injection mode: bubbler ａnd direct draw

Sample size: up to 4 in standard, optional 12in

Substrate heater: up to 500°C, optional higher temp

 

 

产品介绍

Applications

High k dielectrics

Nanocoatings

Surface modification layers

Device encapsulations

Photonic crystals

Optional add-on components

Remote plasma source

Ozone delivery system

Quartz crystal monitor

Quadruple mass spectrometer

Real-time temperature monitor

Ellipsometer

LoadLock ALD-02原子层沉积系统 ALD

产品特点

产品参数

产品介绍

The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.

 

 

产品参数

Operation Vacuum: 1 Torr to UHV 

2 Heated Gas Lines (can be expanded to 12)

Gas injection mode: bubbler ａnd direct draw

Sample size: up to 4 in standard, optional 12in

Substrate heater: up to 500°C, optional higher temp

 

 

产品介绍

Applications

High k dielectrics

Nanocoatings

Surface modification layers

Device encapsulations

Photonic crystals

Optional add-on components

Remote plasma source

Ozone delivery system

Quartz crystal monitor

Quadruple mass spectrometer

Real-time temperature monitor

Ellipsometer

LoadLock ALD-02原子层沉积系统 ALD

产品特点

产品参数

产品介绍

The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.

 

 

产品参数

Operation Vacuum: 1 Torr to UHV 

2 Heated Gas Lines (can be expanded to 12)

Gas injection mode: bubbler ａnd direct draw

Sample size: up to 4 in standard, optional 12in

Substrate heater: up to 500°C, optional higher temp

 

 

产品介绍

Applications

High k dielectrics

Nanocoatings

Surface modification layers

Device encapsulations

Photonic crystals

Optional add-on components

Remote plasma source

Ozone delivery system

Quartz crystal monitor

Quadruple mass spectrometer

Real-time temperature monitor

Ellipsometer

LoadLock ALD-02原子层沉积系统 ALD

产品特点

产品参数

产品介绍

The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.

 

 

产品参数

Operation Vacuum: 1 Torr to UHV 

2 Heated Gas Lines (can be expanded to 12)

Gas injection mode: bubbler ａnd direct draw

Sample size: up to 4 in standard, optional 12in

Substrate heater: up to 500°C, optional higher temp

 

 

产品介绍

Applications

High k dielectrics

Nanocoatings

Surface modification layers

Device encapsulations

Photonic crystals

Optional add-on components

Remote plasma source

Ozone delivery system

Quartz crystal monitor

Quadruple mass spectrometer

Real-time temperature monitor

Ellipsometer

LoadLockv ALD-02原子层沉积系统 ALD

产品特点

产品参数

产品介绍

The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.

 

 

产品参数

Operation Vacuum: 1 Torr to UHV 

2 Heated Gas Lines (can be expanded to 12)

Gas injection mode: bubbler ａnd direct draw

Sample size: up to 4 in standard, optional 12in

Substrate heater: up to 500°C, optional higher temp

 

 

产品介绍

Applications

High k dielectrics

Nanocoatings

Surface modification layers

Device encapsulations

Photonic crystals

Optional add-on components

Remote plasma source

Ozone delivery system

Quartz crystal monitor

Quadruple mass spectrometer

Real-time temperature monitor

Ellipsometer

LoadLock ALD-02原子层沉积系统 ALD

产品特点

产品参数

产品介绍

The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.

 

 

产品参数

Operation Vacuum: 1 Torr to UHV 

2 Heated Gas Lines (can be expanded to 12)

Gas injection mode: bubbler ａnd direct draw

Sample size: up to 4 in standard, optional 12in

Substrate heater: up to 500°C, optional higher temp

 

 

产品介绍

Applications

High k dielectrics

Nanocoatings

Surface modification layers

Device encapsulations

Photonic crystals

Optional add-on components

Remote plasma source

Ozone delivery system

Quartz crystal monitor

Quadruple mass spectrometer

Real-time temperature monitor

Ellipsometer

LoadLockvv ALD-02原子层沉积系统 ALD

产品特点

产品参数

产品介绍

The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.

 

 

产品参数

Operation Vacuum: 1 Torr to UHV 

2 Heated Gas Lines (can be expanded to 12)

Gas injection mode: bubbler ａnd direct draw

Sample size: up to 4 in standard, optional 12in

Substrate heater: up to 500°C, optional higher temp

 

 

产品介绍

Applications

High k dielectrics

Nanocoatings

Surface modification layers

Device encapsulations

Photonic crystals

Optional add-on components

Remote plasma source

Ozone delivery system

Quartz crystal monitor

Quadruple mass spectrometer

Real-time temperature monitor

Ellipsometer

LoadLock ALD-02原子层沉积系统 ALD

产品特点

产品参数

产品介绍

The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.

 

 

产品参数

Operation Vacuum: 1 Torr to UHV 

2 Heated Gas Lines (can be expanded to 12)

Gas injection mode: bubbler ａnd direct draw

Sample size: up to 4 in standard, optional 12in

Substrate heater: up to 500°C, optional higher temp

 

 

产品介绍

Applications

High k dielectrics

Nanocoatings

Surface modification layers

Device encapsulations

Photonic crystals

Optional add-on components

Remote plasma source

Ozone delivery system

Quartz crystal monitor

Quadruple mass spectrometer

Real-time temperature monitor

Ellipsometer

LoadLock ALD-02原子层沉积系统 ALD

产品特点

产品参数

产品介绍

The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.

 

 

产品参数

Operation Vacuum: 1 Torr to UHV 

2 Heated Gas Lines (can be expanded to 12)

Gas injection mode: bubbler ａnd direct draw

Sample size: up to 4 in standard, optional 12in

Substrate heater: up to 500°C, optional higher temp

 

 

产品介绍

Applications

High k dielectrics

Nanocoatings

Surface modification layers

Device encapsulations

Photonic crystals

Optional add-on components

Remote plasma source

Ozone delivery system

Quartz crystal monitor

Quadruple mass spectrometer

Real-time temperature monitor

Ellipsometer

LoadLock ALD-02原子层沉积系统 ALD

产品特点

产品参数

产品介绍

The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.

 

 

产品参数

Operation Vacuum: 1 Torr to UHV 

2 Heated Gas Lines (can be expanded to 12)

Gas injection mode: bubbler ａnd direct draw

Sample size: up to 4 in standard, optional 12in

Substrate heater: up to 500°C, optional higher temp

 

 

产品介绍

Applications

High k dielectrics

Nanocoatings

Surface modification layers

Device encapsulations

Photonic crystals

Optional add-on components

Remote plasma source

Ozone delivery system

Quartz crystal monitor

Quadruple mass spectrometer

Real-time temperature monitor

Ellipsometer

LoadLock ALD-02原子层沉积系统 ALD

产品特点

产品参数

产品介绍

The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.

 

 

产品参数

Operation Vacuum: 1 Torr to UHV 

2 Heated Gas Lines (can be expanded to 12)

Gas injection mode: bubbler ａnd direct draw

Sample size: up to 4 in standard, optional 12in

Substrate heater: up to 500°C, optional higher temp

 

 

产品介绍

Applications

High k dielectrics

Nanocoatings

Surface modification layers

Device encapsulations

Photonic crystals

Optional add-on components

Remote plasma source

Ozone delivery system

Quartz crystal monitor

Quadruple mass spectrometer

Real-time temperature monitor

Ellipsometer

LoadLock ALD-02原子层沉积系统 ALD

产品特点

产品参数

产品介绍

The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.

 

 

产品参数

Operation Vacuum: 1 Torr to UHV 

2 Heated Gas Lines (can be expanded to 12)

Gas injection mode: bubbler ａnd direct draw

Sample size: up to 4 in standard, optional 12in

Substrate heater: up to 500°C, optional higher temp

 

 

产品介绍

Applications

High k dielectrics

Nanocoatings

Surface modification layers

Device encapsulations

Photonic crystals

Optional add-on components

Remote plasma source

Ozone delivery system

Quartz crystal monitor

Quadruple mass spectrometer

Real-time temperature monitor

Ellipsometer

LoadLock ALD-02原子层沉积系统 ALD

产品特点

产品参数

产品介绍

The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.

 

 

产品参数

Operation Vacuum: 1 Torr to UHV 

2 Heated Gas Lines (can be expanded to 12)

Gas injection mode: bubbler ａnd direct draw

Sample size: up to 4 in standard, optional 12in

Substrate heater: up to 500°C, optional higher temp

 

 

产品介绍

Applications

High k dielectrics

Nanocoatings

Surface modification layers

Device encapsulations

Photonic crystals

Optional add-on components

Remote plasma source

Ozone delivery system

Quartz crystal monitor

Quadruple mass spectrometer

Real-time temperature monitor

Ellipsometer

LoadLock ALD-02原子层沉积系统 ALD

产品特点

产品参数

产品介绍

The Advanced ALD system is a viscous flow-type reactor for ultra thin film deposition. The growth process is controlled by a Windows-based software package. The base model is equipped with two gas lines ａnd handles wafer size up to 12 ". With a compact footprint, all hardware is enclosed in a negative pressure cabinet for safety more information.

 

 

产品参数

Operation Vacuum: 1 Torr to UHV 

2 Heated Gas Lines (can be expanded to 12)

Gas injection mode: bubbler ａnd direct draw

Sample size: up to 4 in standard, optional 12in

Substrate heater: up to 500°C, optional higher temp

 

 

产品介绍

Applications

High k dielectrics

Nanocoatings

Surface modification layers

Device encapsulations

Photonic crystals

Optional add-on components

Remote plasma source

Ozone delivery system

Quartz crystal monitor

Quadruple mass spectrometer

Real-time temperature monitor

Ellipsometer

LoadLock

 

更新时间：2024/4/24 17:09:13

标签：ALD-02原子层沉积系统   ALD   

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